Junwen Gai, Changchang Dong, Rile Ge, Moulay Tahar Sougrati, Xiangdong Meng, Junhu Wang. “Freezing the metastable Sn-C interface via millisecond flash Joule heating for ultrafast sodium storage kinetics.” ChemRxiv (). https://doi.org/10.26434/chemrxiv.15007486/v1

The main paper refers to supporting information, but no separate supporting information file was found among the files available from the ChemRxiv record

Sn@G sample treated at 120 V for 100 ms
ICP-OES, total Sn content 10.56 wt%
XPS, Sn 3d5/2 binding energy 485.90 eV, assigned to Sn-S bonds in SnS
XPS, Sn 3d3/2 binding energy 494.20 eV, assigned to Sn-S bonds in SnS
XPS elemental quantitative analysis, C atomic percentage 95.83 %
XPS elemental quantitative analysis, O atomic percentage 3.16 %
XPS elemental quantitative analysis, S atomic percentage 0.83 %
XPS elemental quantitative analysis, Sn atomic percentage 0.18 %
XPS, S 2p Characteristic signals of C-S bonds were detected at the peaks of S 2p3/2 and S 2p1/2 orbitals
XPS, Sn 3d Characteristic peaks of SnS2 were also observed
XPS, C 1s fitted components C-C, C-O, C=O, C-S, Sn-C
119Sn Mössbauer, Sn2+ component 49.5 %
119Sn Mössbauer, Sn-C component 10.2 %
119Sn Mössbauer, Sn4+ component 40.4 %
SnS/SnS2 phase ratio Close to 1:1
XRD Well-defined SnS2/SnS dual-phase peaks without incomplete reaction, over-crystallization or agglomeration
Main, pp. 8–10, 12
Sn@G composites treated at 120 V for 100–300 ms
119Sn Mössbauer, metastable Sn-C interface content Reached its maximum at 200 ms and decreased at 300 ms
Raman, ID/IG ratio Decreased
XRD, graphene (002) peak 26.4°
HR-TEM, graphene (002) interplanar spacing 0.334 nm
HR-TEM assignments Graphene (002), SnS2 (101), and SnS (101)
Main, pp. 8–9, 11–12
Sn@G sample treated at 120 V for 200 ms
119Sn Mössbauer, Sn2+ component 55.7 %
119Sn Mössbauer, Sn-C component 11.1 %
119Sn Mössbauer, Sn4+ component 33.21 %
119Sn Mössbauer, Sn-C isomer shift ~1.2 mm s⁻¹
Main, pp. 8–9
Sn@G sample treated at 120 V for 300 ms
119Sn Mössbauer, Sn2+ component 71.4 %
119Sn Mössbauer, Sn-C component 5.3 %
119Sn Mössbauer, Sn4+ component 22.3 %
Main, pp. 8–9
Sn@G products treated under different FJH conditions
XRD, phase evolution SnS2 to SnS with increasing FJH voltage and pulse duration
Main, pp. 11–12
Crystalline graphene region in the FJH-treated Sn@G composite
Carbon K-edge EELS, π peak 285.6 eV, showing a slight blue shift relative to pristine graphene (approximately 285.0 eV)
Carbon K-edge EELS, shoulder peak 286.1 eV
Main, p. 13
Amorphous region in the FJH-treated Sn@G composite
Carbon K-edge EELS, π peak 286.5 eV with a significantly broadened profile
Main, p. 13
Lattice distortion region in the FJH-treated Sn@G composite
Carbon K-edge EELS, π peak 285.7 eV
Main, p. 13
SnS/SnS2–graphene interface
Carbon K-edge EELS line scan, π peak Around 285.6 eV
Carbon K-edge EELS line scan, shoulder peak 286.1 eV
Carbon K-edge EELS line scan, σ peak Substantially broadened
Main, p. 13
Sn-C interfaces in Sn@G samples treated at 120 V for 100 and 200 ms
Carbon K-edge EELS Characteristic π and σ peaks of graphitic carbon; the π peak shifts slightly toward the high-energy side, while the σ peak becomes markedly flattened and attenuated
Sn M4,5-edge EELS Delayed edge detected at the same probing site
Carbon K-edge EELS, 100 ms sample The σ peak is more flattened than in the 200 ms sample
Sn M-edge EELS, 100 ms sample Higher overall signal intensity than in the 200 ms sample