| Sublimation image analysis and thermogravimetric analysis under nitrogen at 10 mbar | Sufficiently volatile from 130 to 150 °C and not completely vaporized; non-volatile residue was extremely low; no evidence of significant decomposition within the investigated temperature range |
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Sajmohan Mohandas Moolayil, Ji Liu, Melania Rogowska, Ola Nilsen, Michael Nolan, Henrik Hovde Sønsteby. “Atomic layer deposition of ferroelectric HfₓZr₁₋ₓO₂ from metal-β-diketonate precursors with fine cation tunability.” ChemRxiv (). https://doi.org/10.26434/chemrxiv.15007719/v1
Values presented only in thermogravimetric, X-ray-fluorescence, microscopy, diffraction, polarization–electric-field, and switching-current plots or images were not transcribed. A separate supporting information file was not found among the files available from the ChemRxiv record
| X-ray fluorescence | Nominal 50:50 Hf:Zr composition at an approximately 65:35 Hf(thd)₄:Zr(thd)₄ pulse ratio; tuning within 45–55 at. % by small pulse-sequence adjustments |
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| Atomic force microscopy, approximately 10 nm ZrO₂, HfO₂, and 50:50 HfₓZr₁₋ₓO₂ films after rapid thermal annealing at 400 °C under N₂ | RMS roughness 0.3–0.4 nm; consistent, fine-grained morphology |
| Grazing-incidence X-ray diffraction, 20 nm 50:50 HfₓZr₁₋ₓO₂, Cu Kα₁, λ = 1.5406 Å, grazing angle 0.45° | 2θ = 30.5° matched orthorhombic (111) and tetragonal (011); 2θ = 28.5° and 31.5° represented monoclinic (−111) and (111), respectively; 2θ = 35.6° represented orthorhombic (200), (020), and (002), coinciding with tetragonal (002) |
| Polarization–electric-field and switching-current response, 20 nm film, 3 MV cm⁻¹, period 1 ms | Typical ferroelectric hysteresis behavior with sharp switching-current loops; remanent polarization 2Pᵣ = 23.4 µC cm⁻² after rapid thermal annealing, with an associated imprint |